BAS216WT BAS216WT fast switching surface mount si-planar diodes schnelle si-planar-dioden fr die oberfl?chenmontage version 2010-11-30 dimensions - ma?e [mm] power dissipation C verlustleistung 150 mw repetitive peak reverse voltage periodische spitzensperrspannung 85 v plastic case C kunststoffgeh?use sod-523 weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) BAS216WT power dissipation ? verlustleistung p tot 150 mw 1 ) max. average forward current C dauergrenzstrom (dc) i fav 150 ma 1 ) non repetitive peak forward surge current sto?strom-grenzwert t p 1 s t p 1 s i fsm i fsm 0.5 a 2 a repetitive peak reverse voltage C periodische spitzensperrspannung v rrm 85 v junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -55...+150c -55+150c characteristics (t j = 25c) kennwerte (t j = 25c) forward voltage 2 ) durchlass-spannung 2 ) i f = 1 ma i f = 10 ma i f = 50 ma i f = 150 ma v f v f v f v f < 715 mv < 855 mv < 1.0 v < 1.25 v leakage current sperrstrom t j = 25c v r = 75 v i r < 1 a t j = 150c t j = 150c v r = 25 v v r = 75 v i r i r < 30 a < 50 a max. junction capacitance C max. sperrschichtkapazit?t v r = 0 v, f = 1 mhz c t 1.5 pf reverse recovery time C sperrverzug i f = 10 ma ber/through i r = 10 ma bis/to i r = 1 ma t rr < 4 ns thermal resistance junction to ambient air w?rme widerstand sperrschicht C umgebende luft r tha < 620 k/w 1 ) 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 1.2 0 . 1 2 0 . 8 0 . 3 5 0 . 7 1.6
BAS216WT 2 http://www.diotec.com/ ? diotec semiconductor ag forward characteristics (typical values) durchlasskennlinien (typische werte) v f [v] 1.4 1.0 0.8 0.6 0.4 0 [a] i f 10 -4 10 -3 10 -2 10 -1 1 t = 25c j t = 125c j [%] p tot 120 100 80 60 40 20 0 [c] t a 150 100 50 0 power dissipation versus ambient temperature ) verlustleistung in abh. von d. umgebungstemp. ) 1 1
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